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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3505 DESCRIPTION With TO-3PN package High voltage ,high reliability High speed switching APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Fig.1 simplified outline (TO-3PN) and symbol INC Collector-base voltage Collector-emitter voltage E SEM ANG H Open base OND IC CONDITIONS TOR UC VALUE 900 700 10 6 3 UNIT V V V A A W ae ae Open emitter Emitter-base voltage Open collector Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 80 150 -55~150 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IC=2A ;IB=0.4A IC=2A ;IB=0.4A VCB=900V; IE=0 VEB=10V; IC=0 IC=2A ; VCE=5V 10 MIN 700 900 TYP. 2SC3505 SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE MAX UNIT V V 0.5 1.2 1.0 1.0 V V mA mA Switching times ton tstg tf Turn-on time Fall time Storage time CHA IN E SEM NG IC=3A;IB1=0.6A;IB2=-1.2A RL=100| ,PW=20|I s DutyU 2% OND IC TOR UC 1.0 |I 5.0 1.0 s |I |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC3505 CHA IN E SEM NG OND IC TOR UC Fig.2 outline dimensions 3 |
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